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NTBG014N120M3P

NTBG014N120M3P onsemi

ntbg014n120m3p-d.pdf
Hersteller: onsemi
Description: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 337 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6313 pF @ 800 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+28.27 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTBG014N120M3P onsemi

Description: SIC MOSFET 1200 V 14 MOHM M3P SE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V, Power Dissipation (Max): 454W (Tc), Vgs(th) (Max) @ Id: 4.63V @ 37mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 337 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6313 pF @ 800 V.

Weitere Produktangebote NTBG014N120M3P nach Preis ab 32.63 EUR bis 47.98 EUR

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NTBG014N120M3P NTBG014N120M3P onsemi ntbg014n120m3p-d.pdf Description: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 337 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6313 pF @ 800 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.04 EUR
10+34.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG014N120M3P NTBG014N120M3P onsemi ntbg014n120m3p-d.pdf SiC MOSFETs SIC MOS D2PAK-7L 14MOHM 1200V
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
1+47.98 EUR
10+35.18 EUR
100+34.46 EUR
500+32.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG014N120M3P ntbg014n120m3p-d.pdf
NTBG014N120M3P
Hersteller: onsemi
Description: SIC MOSFET 1200 V 14 MOHM M3P SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 74A, 18V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 4.63V @ 37mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 337 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6313 pF @ 800 V
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+45.04 EUR
10+34.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG014N120M3P ntbg014n120m3p-d.pdf
NTBG014N120M3P
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 14MOHM 1200V
auf Bestellung 907 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+47.98 EUR
10+35.18 EUR
100+34.46 EUR
500+32.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH