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NTBG015N065SC1

NTBG015N065SC1 onsemi

ntbg015n065sc1-d.pdf
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+26.03 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Produktbewertung abgeben

Technische Details NTBG015N065SC1 onsemi

Description: SILICON CARBIDE MOSFET, NCHANNEL, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 25mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V.

Weitere Produktangebote NTBG015N065SC1 nach Preis ab 30.59 EUR bis 42.33 EUR

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NTBG015N065SC1 NTBG015N065SC1 onsemi ntbg015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 10947 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.01 EUR
10+31.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG015N065SC1 NTBG015N065SC1 onsemi ntbg015n065sc1-d.pdf SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 3374 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.33 EUR
10+33.33 EUR
100+32.31 EUR
500+30.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG015N065SC1 ntbg015n065sc1-d.pdf
NTBG015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 10947 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+42.01 EUR
10+31.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG015N065SC1 ntbg015n065sc1-d.pdf
NTBG015N065SC1
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 3374 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+42.33 EUR
10+33.33 EUR
100+32.31 EUR
500+30.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH