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NTBG015N065SC1

NTBG015N065SC1 onsemi

ntbg015n065sc1-d.pdf Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+29.01 EUR
Mindestbestellmenge: 800
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Technische Details NTBG015N065SC1 onsemi

Description: SILICON CARBIDE MOSFET, NCHANNEL, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 25mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V.

Weitere Produktangebote NTBG015N065SC1 nach Preis ab 34 EUR bis 59.05 EUR

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NTBG015N065SC1 NTBG015N065SC1 Hersteller : onsemi ntbg015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+43.75 EUR
10+ 38.87 EUR
100+ 34 EUR
NTBG015N065SC1 NTBG015N065SC1 Hersteller : onsemi NTBG015N065SC1_D-2318444.pdf MOSFET SIC MOS D2PAK-7L 650V
auf Bestellung 942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+59.05 EUR
10+ 52.92 EUR
25+ 52.29 EUR
100+ 47.82 EUR
250+ 46.82 EUR
500+ 43.95 EUR
800+ 41.64 EUR
NTBG015N065SC1 NTBG015N065SC1 Hersteller : ONSEMI NTBG015N065SC1-D.PDF Description: ONSEMI - NTBG015N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 145 A, 650 V, 0.012 ohm, TO-263 (D2PAK)
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 145A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 7Pin(s)
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.012ohm
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)
NTBG015N065SC1 NTBG015N065SC1 Hersteller : ON Semiconductor ntbg015n065sc1-d.pdf Trans MOSFET N-CH SiC 650V 176A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)