NTBG022N120M3S ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 11+ | 16.4 EUR |
| 13+ | 14.29 EUR |
| 25+ | 12.2 EUR |
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Technische Details NTBG022N120M3S ON Semiconductor
Description: SIC MOSFET 1200 V 22 MOHM M3S SE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V.
Weitere Produktangebote NTBG022N120M3S nach Preis ab 11.29 EUR bis 37.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NTBG022N120M3S | ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG022N120M3S | onsemi |
Description: SIC MOSFET 1200 V 22 MOHM M3S SE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG022N120M3S | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG022N120M3S | ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 3270 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG022N120M3S | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V |
auf Bestellung 819 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG022N120M3S | onsemi |
Description: SIC MOSFET 1200 V 22 MOHM M3S SE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V |
auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG022N120M3S | ONN |
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auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTBG022N120M3S |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 18.74 EUR |
| NTBG022N120M3S |
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Hersteller: onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 19.79 EUR |
| NTBG022N120M3S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 20.75 EUR |
| 11+ | 15.82 EUR |
| 13+ | 13.46 EUR |
| 25+ | 11.29 EUR |
| NTBG022N120M3S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 3270 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 24.94 EUR |
| 100+ | 23.35 EUR |
| 500+ | 21.65 EUR |
| 1000+ | 19.99 EUR |
| NTBG022N120M3S |
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Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V
SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V
auf Bestellung 819 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.02 EUR |
| 10+ | 23.67 EUR |
| 100+ | 22.07 EUR |
| 500+ | 21.93 EUR |
| 800+ | 20.21 EUR |
| NTBG022N120M3S |
|
Hersteller: onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.87 EUR |
| 10+ | 27.06 EUR |
| 100+ | 24.22 EUR |
| NTBG022N120M3S |
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Hersteller: ONN
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)