NTBG022N120M3S onsemi
Hersteller: onsemiDescription: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 17.94 EUR |
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Technische Details NTBG022N120M3S onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V.
Weitere Produktangebote NTBG022N120M3S nach Preis ab 18.74 EUR bis 28.95 EUR
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NTBG022N120M3S | Hersteller : onsemi |
Description: SIC MOSFET 1200 V 22 MOHM M3S SE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V |
auf Bestellung 24777 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG022N120M3S | Hersteller : onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V |
auf Bestellung 909 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG022N120M3S | Hersteller : ON Semiconductor |
SiC MOSFET 1200 V 22 mohm |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBG022N120M3S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 297A; 220W Type of transistor: N-MOSFET Power dissipation: 220W Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Polarisation: unipolar Gate-source voltage: -10...22V Gate charge: 142nC On-state resistance: 44mΩ Drain current: 71A Pulsed drain current: 297A Drain-source voltage: 1.2kV |
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