auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.64 EUR |
| 10+ | 15.12 EUR |
| 100+ | 12.58 EUR |
| 250+ | 11.93 EUR |
| 800+ | 9.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTBG023N065M3S onsemi
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V.
Weitere Produktangebote NTBG023N065M3S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NTBG023N065M3S | Hersteller : onsemi |
 Description: SIC MOS D2PAK-7L 23MOHM 650V M3SPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V |
Produkt ist nicht verfügbar |
|
|
|
NTBG023N065M3S | Hersteller : onsemi |
Description: SIC MOS D2PAK-7L 23MOHM 650V M3S Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1951 pF @ 400 V |
Produkt ist nicht verfügbar |