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NTBG025N065SC1

NTBG025N065SC1 onsemi

ntbg025n065sc1-d.pdf
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+17.5 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTBG025N065SC1 onsemi

Description: SILICON CARBIDE (SIC) MOSFET - 1, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 15.5mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V.

Weitere Produktangebote NTBG025N065SC1 nach Preis ab 20.52 EUR bis 33.28 EUR

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NTBG025N065SC1 NTBG025N065SC1 onsemi ntbg025n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
auf Bestellung 4635 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.89 EUR
10+23.59 EUR
100+21.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG025N065SC1 NTBG025N065SC1 onsemi ntbg025n065sc1-d.pdf SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.28 EUR
10+23.88 EUR
100+21.68 EUR
500+20.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG025N065SC1 ntbg025n065sc1-d.pdf
NTBG025N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
auf Bestellung 4635 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+32.89 EUR
10+23.59 EUR
100+21.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG025N065SC1 ntbg025n065sc1-d.pdf
NTBG025N065SC1
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+33.28 EUR
10+23.88 EUR
100+21.68 EUR
500+20.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH