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NTBG028N170M1

NTBG028N170M1 onsemi

ntbg028n170m1-d.pdf
Hersteller: onsemi
Description: SIC MOSFET 1700 V 28 MOHM M1 SER
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V
Power Dissipation (Max): 428W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+38.01 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTBG028N170M1 onsemi

Description: SIC MOSFET 1700 V 28 MOHM M1 SER, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 71A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V, Power Dissipation (Max): 428W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V.

Weitere Produktangebote NTBG028N170M1 nach Preis ab 46.41 EUR bis 60.79 EUR

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NTBG028N170M1 NTBG028N170M1 onsemi ntbg028n170m1-d.pdf Description: SIC MOSFET 1700 V 28 MOHM M1 SER
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V
Power Dissipation (Max): 428W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
1+57.06 EUR
10+46.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG028N170M1 NTBG028N170M1 onsemi ntbg028n170m1-d.pdf SiC MOSFETs SIC 1700V MOS 28MO IN TO263-7L
auf Bestellung 1874 Stücke:
Lieferzeit 374-378 Tag (e)
1+60.79 EUR
10+48.84 EUR
100+46.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG028N170M1 ntbg028n170m1-d.pdf
NTBG028N170M1
Hersteller: onsemi
Description: SIC MOSFET 1700 V 28 MOHM M1 SER
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V
Power Dissipation (Max): 428W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+57.06 EUR
10+46.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG028N170M1 ntbg028n170m1-d.pdf
NTBG028N170M1
Hersteller: onsemi
SiC MOSFETs SIC 1700V MOS 28MO IN TO263-7L
auf Bestellung 1874 Stücke:
Lieferzeit 374-378 Tag (e)
AnzahlPreis
1+60.79 EUR
10+48.84 EUR
100+46.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH