auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.81 EUR |
| 10+ | 12.28 EUR |
| 100+ | 9.54 EUR |
| 500+ | 9.52 EUR |
| 800+ | 9.43 EUR |
Produktrezensionen
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Technische Details NTBG030N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V.
Weitere Produktangebote NTBG030N120M3S nach Preis ab 9.31 EUR bis 17.86 EUR
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NTBG030N120M3S | Hersteller : onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET - EPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
auf Bestellung 520 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG030N120M3S | Hersteller : ON Semiconductor |
Silicon Carbide (SiC) MOSFET |
Produkt ist nicht verfügbar |
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| NTBG030N120M3S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 207A Power dissipation: 174W Case: D2PAK-7 On-state resistance: 58mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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NTBG030N120M3S | Hersteller : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
Produkt ist nicht verfügbar |
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| NTBG030N120M3S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 207A Power dissipation: 174W Case: D2PAK-7 On-state resistance: 58mΩ Mounting: SMD Gate charge: 107nC Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V |
Produkt ist nicht verfügbar |