NTBG032N065M3S onsemi
Hersteller: onsemiDescription: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 6.43 EUR |
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Technische Details NTBG032N065M3S onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 7.5mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V.
Weitere Produktangebote NTBG032N065M3S nach Preis ab 7.98 EUR bis 13.80 EUR
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NTBG032N065M3S | Hersteller : onsemi |
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V |
auf Bestellung 8495 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG032N065M3S | Hersteller : ONSEMI |
Description: ONSEMI - NTBG032N065M3S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBG032N065M3S | Hersteller : ON Semiconductor |
SiC MOS D2PAK-7L 32mohm 650V M3S |
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