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NTBG040N120M3S

NTBG040N120M3S onsemi

NTBG040N120M3S-D.PDF Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 752 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+31.51 EUR
10+ 27.75 EUR
100+ 24 EUR
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Technische Details NTBG040N120M3S onsemi

Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 10mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V.

Weitere Produktangebote NTBG040N120M3S nach Preis ab 21.92 EUR bis 31.72 EUR

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Preis ohne MwSt
NTBG040N120M3S NTBG040N120M3S Hersteller : onsemi NTBG040N120M3S_D-3150529.pdf MOSFET SIC MOS D2PAK-7L 40MOHM 1200V M3
auf Bestellung 265 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+31.72 EUR
10+ 27.95 EUR
25+ 27.2 EUR
50+ 25.69 EUR
100+ 24.18 EUR
250+ 23.43 EUR
500+ 21.92 EUR
Mindestbestellmenge: 2
NTBG040N120M3S Hersteller : ON Semiconductor ntbg040n120m3s-d.pdf Silicon Carbide (SiC) MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
NTBG040N120M3S NTBG040N120M3S Hersteller : onsemi NTBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
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