Produkte > ONSEMI > NTBG060N065SC1
NTBG060N065SC1

NTBG060N065SC1 onsemi

ntbg060n065sc1-d.pdf Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.21 EUR
10+ 14.75 EUR
100+ 12.29 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details NTBG060N065SC1 onsemi

Description: SILICON CARBIDE (SIC) MOSFET - 4, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 6.5mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V.

Weitere Produktangebote NTBG060N065SC1 nach Preis ab 9.82 EUR bis 17.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTBG060N065SC1 NTBG060N065SC1 Hersteller : onsemi NTBG060N065SC1_D-3150611.pdf MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.34 EUR
10+ 14.85 EUR
25+ 13.48 EUR
100+ 12.39 EUR
250+ 11.65 EUR
500+ 10.93 EUR
800+ 9.82 EUR
NTBG060N065SC1 Hersteller : ON Semiconductor ntbg060n065sc1-d.pdf Silicon Carbide (SiC) MOSFET
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
NTBG060N065SC1 NTBG060N065SC1 Hersteller : onsemi ntbg060n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Produkt ist nicht verfügbar