NTBG060N065SC1 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 21+ | 8.81 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
21 Stücke
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Technische Details NTBG060N065SC1 ON Semiconductor
Description: SILICON CARBIDE (SIC) MOSFET - 4, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 6.5mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V.
Weitere Produktangebote NTBG060N065SC1 nach Preis ab 8.78 EUR bis 22.1 EUR
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NTBG060N065SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 650V 46A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG060N065SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 650V 46A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG060N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - 4Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
auf Bestellung 335 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG060N065SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 650V |
auf Bestellung 312 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTBG060N065SC1 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 650V 46A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 650V 46A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 11.01 EUR |
| 25+ | 10.44 EUR |
| 100+ | 9.88 EUR |
| 250+ | 9.32 EUR |
| 500+ | 8.78 EUR |
| NTBG060N065SC1 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 650V 46A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 650V 46A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 11.26 EUR |
| 25+ | 10.84 EUR |
| 100+ | 10.42 EUR |
| 250+ | 10.1 EUR |
| 500+ | 9.78 EUR |
| NTBG060N065SC1 |
![]() |
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Description: SILICON CARBIDE (SIC) MOSFET - 4
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.99 EUR |
| 10+ | 15.26 EUR |
| 50+ | 12.38 EUR |
| 100+ | 12.09 EUR |
| NTBG060N065SC1 |
![]() |
Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 650V
SiC MOSFETs SIC MOS D2PAK-7L 650V
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.1 EUR |
| 10+ | 12.44 EUR |
| 100+ | 12.15 EUR |
| 500+ | 11.5 EUR |



