NTBG060N090SC1 onsemi
Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details NTBG060N090SC1 onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): +19V, -10V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.3V @ 5mA, Power Dissipation (Max): 3.6W (Ta), 211W (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTBG060N090SC1 nach Preis ab 10.96 EUR bis 17.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTBG060N090SC1 | onsemi |
SiC MOSFETs SIC MOS 60MOHM 900V |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
NTBG060N090SC1 | onsemi |
Description: SIC MOS N-CH 900V 5.8A D2PAK-7 Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): +19V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V |
auf Bestellung 9126 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| NTBG060N090SC1 | ON Semiconductor |
|
auf Bestellung 295 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTBG060N090SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS 60MOHM 900V
SiC MOSFETs SIC MOS 60MOHM 900V
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.14 EUR |
| 10+ | 13.15 EUR |
| 100+ | 12.3 EUR |
| 500+ | 11.77 EUR |
| 800+ | 10.96 EUR |
| NTBG060N090SC1 |
|
Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
auf Bestellung 9126 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 17.48 EUR |
| 10+ | 13.52 EUR |
| 100+ | 12.9 EUR |
| NTBG060N090SC1 |
|
Hersteller: ON Semiconductor
auf Bestellung 295 Stücke:
Lieferzeit 21-28 Tag (e)