Produkte > ONSEMI > NTBG060N090SC1
NTBG060N090SC1

NTBG060N090SC1 onsemi

NTBG060N090SC1_D-2318407.pdf Hersteller: onsemi
MOSFET SIC MOS 60MOHM 900V
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.6 EUR
10+ 12 EUR
100+ 11.84 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details NTBG060N090SC1 onsemi

Description: MOSFET N-CH 900V 5.8/44A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V, Power Dissipation (Max): 3.6W (Ta), 211W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -10V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V.

Weitere Produktangebote NTBG060N090SC1 nach Preis ab 16.61 EUR bis 24.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTBG060N090SC1 NTBG060N090SC1 Hersteller : onsemi ntbg060n090sc1-d.pdf Description: MOSFET N-CH 900V 5.8/44A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+16.61 EUR
Mindestbestellmenge: 800
NTBG060N090SC1 NTBG060N090SC1 Hersteller : onsemi ntbg060n090sc1-d.pdf Description: MOSFET N-CH 900V 5.8/44A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -10V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+24.06 EUR
10+ 21.19 EUR
100+ 18.32 EUR
NTBG060N090SC1 Hersteller : ON Semiconductor ntbg060n090sc1-d.pdf
auf Bestellung 295 Stücke:
Lieferzeit 21-28 Tag (e)
NTBG060N090SC1 Hersteller : ON Semiconductor ntbg060n090sc1-d.pdf SiC Power, Single N-Channel MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)