Technische Details NTBG060N090SC1 ON Semiconductor
Description: ONSEMI - NTBG060N090SC1 - SIC MOSFET, N-CH, 15V, 44A, TO-263HV, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 900V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 44A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, MSL: MSL 1 - Unlimited, Gate-Source-Schwellenspannung, max.: 2.7V, MOSFET-Modul-Konfiguration: Single, Verlustleistung: 211W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-263HV (D2PAK), Anzahl der Pins: 7Pin(s), Produktpalette: EliteSiC Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: N Channel, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 15V, Drain-Source-Durchgangswiderstand: 0.06ohm, directShipCharge: 25.
Weitere Produktangebote NTBG060N090SC1 nach Preis ab 12.79 EUR bis 27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NTBG060N090SC1 | onsemi |
 Description: SIC MOS N-CH 900V 5.8A D2PAK-7Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): +19V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG060N090SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 900V 5.8A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG060N090SC1 | ON Semiconductor |
Trans MOSFET N-CH SiC 900V 5.8A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 948 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG060N090SC1 | onsemi |
SiC MOSFETs SIC MOS 60MOHM 900V |
auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG060N090SC1 | ONSEMI |
Description: ONSEMI - NTBG060N090SC1 - SIC MOSFET, N-CH, 15V, 44A, TO-263HV tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 900V rohsCompliant: Y-EX Dauer-Drainstrom Id: 44A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y MSL: MSL 1 - Unlimited Gate-Source-Schwellenspannung, max.: 2.7V MOSFET-Modul-Konfiguration: Single Verlustleistung: 211W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 15V Drain-Source-Durchgangswiderstand: 0.06ohm directShipCharge: 25 |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG060N090SC1 | onsemi |
Description: SIC MOS N-CH 900V 5.8A D2PAK-7 Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 3.6W (Ta), 211W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): +19V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V |
auf Bestellung 895 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG060N090SC1 | ON Semiconductor |
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auf Bestellung 295 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTBG060N090SC1 |
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Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 12.79 EUR |
| NTBG060N090SC1 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 900V 5.8A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 900V 5.8A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 13.85 EUR |
| NTBG060N090SC1 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 900V 5.8A 8-Pin(7+Tab) D2PAK T/R
Trans MOSFET N-CH SiC 900V 5.8A 8-Pin(7+Tab) D2PAK T/R
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 13.85 EUR |
| NTBG060N090SC1 |
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Hersteller: onsemi
SiC MOSFETs SIC MOS 60MOHM 900V
SiC MOSFETs SIC MOS 60MOHM 900V
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.9 EUR |
| 10+ | 18.2 EUR |
| 100+ | 16.59 EUR |
| 500+ | 14.53 EUR |
| NTBG060N090SC1 |
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Hersteller: ONSEMI
Description: ONSEMI - NTBG060N090SC1 - SIC MOSFET, N-CH, 15V, 44A, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 900V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - Unlimited
Gate-Source-Schwellenspannung, max.: 2.7V
MOSFET-Modul-Konfiguration: Single
Verlustleistung: 211W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.06ohm
directShipCharge: 25
Description: ONSEMI - NTBG060N090SC1 - SIC MOSFET, N-CH, 15V, 44A, TO-263HV
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 900V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - Unlimited
Gate-Source-Schwellenspannung, max.: 2.7V
MOSFET-Modul-Konfiguration: Single
Verlustleistung: 211W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-263HV (D2PAK)
Anzahl der Pins: 7Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 15V
Drain-Source-Durchgangswiderstand: 0.06ohm
directShipCharge: 25
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 26.92 EUR |
| 12+ | 20.47 EUR |
| 25+ | 18.44 EUR |
| 50+ | 17.99 EUR |
| NTBG060N090SC1 |
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Hersteller: onsemi
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Description: SIC MOS N-CH 900V 5.8A D2PAK-7
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +19V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27 EUR |
| 10+ | 18.91 EUR |
| 100+ | 15.66 EUR |
| NTBG060N090SC1 |
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Hersteller: ON Semiconductor
auf Bestellung 295 Stücke:
Lieferzeit 21-28 Tag (e)