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NTBG070N120M3S

NTBG070N120M3S onsemi

NTBG070N120M3S-D.PDF
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.31 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTBG070N120M3S onsemi

Description: SILICON CARBIDE (SIC) MOSFET - E, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -10V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4.4V @ 7mA, Power Dissipation (Max): 172W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).

Weitere Produktangebote NTBG070N120M3S nach Preis ab 6.05 EUR bis 12.32 EUR

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NTBG070N120M3S NTBG070N120M3S onsemi NTBG070N120M3S-D.PDF SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, D2PAK-7L
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.99 EUR
10+8.17 EUR
100+6.48 EUR
500+6.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG070N120M3S NTBG070N120M3S onsemi NTBG070N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.32 EUR
10+8.39 EUR
100+6.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBG070N120M3S NTBG070N120M3S-D.PDF
NTBG070N120M3S
Hersteller: onsemi
SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, D2PAK-7L
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.99 EUR
10+8.17 EUR
100+6.48 EUR
500+6.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG070N120M3S NTBG070N120M3S-D.PDF
NTBG070N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
auf Bestellung 4743 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.32 EUR
10+8.39 EUR
100+6.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH