NTBG080N120SC1 onsemi
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
| Anzahl | Preis |
|---|---|
| 800+ | 10.1 EUR |
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Technische Details NTBG080N120SC1 onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V.
Weitere Produktangebote NTBG080N120SC1 nach Preis ab 10.45 EUR bis 20.13 EUR
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NTBG080N120SC1 | onsemi |
SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V |
auf Bestellung 562 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 30A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBG080N120SC1 | ONN |
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auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTBG080N120SC1 |
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Hersteller: onsemi
SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V
SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 15.56 EUR |
| 10+ | 12.81 EUR |
| 100+ | 12.02 EUR |
| 500+ | 11.19 EUR |
| 800+ | 10.45 EUR |
| NTBG080N120SC1 |
![]() |
Hersteller: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.13 EUR |
| 10+ | 14.08 EUR |
| 100+ | 12.36 EUR |
| NTBG080N120SC1 |
![]() |
Hersteller: ONN
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
