auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.93 EUR |
| 10+ | 15.91 EUR |
| 25+ | 15.7 EUR |
| 100+ | 14.06 EUR |
| 250+ | 13.92 EUR |
| 500+ | 13.34 EUR |
| 800+ | 12.99 EUR |
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Technische Details NTBG080N120SC1 onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V.
Weitere Produktangebote NTBG080N120SC1 nach Preis ab 21.57 EUR bis 23.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTBG080N120SC1 | Hersteller : onsemi |
 Description: SICFET N-CH 1200V 30A D2PAK-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG080N120SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NTBG080N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 30 A, 1.2 kV, 0.08 ohm, TO-263HV (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 179W Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm |
auf Bestellung 1633 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG080N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 56.4A 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG080N120SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NTBG080N120SC1 - SIC MOSFET, N-CH, 20V, 30A, TO-263HV tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2 Dauer-Drainstrom Id: 30 hazardous: false usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3 MOSFET-Modul-Konfiguration: Single euEccn: NLR Verlustleistung: 179 Bauform - Transistor: TO-263HV (D2PAK) Anzahl der Pins: 7 Produktpalette: - Kanaltyp: N Channel Rds(on)-Prüfspannung: 20 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.08 SVHC: No SVHC (15-Jan-2018) |
Produkt ist nicht verfügbar |
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NTBG080N120SC1 | Hersteller : onsemi |
Description: SICFET N-CH 1200V 30A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V |
Produkt ist nicht verfügbar |