Produkte > ONSEMI > NTBG1000N170M1
NTBG1000N170M1

NTBG1000N170M1 onsemi

NTBG1000N170M1-D.PDF Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.91 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTBG1000N170M1 onsemi

Description: SILICON CARBIDE (SIC) MOSFET EL, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 640µA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V.

Weitere Produktangebote NTBG1000N170M1 nach Preis ab 3.03 EUR bis 7.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTBG1000N170M1 NTBG1000N170M1 Hersteller : onsemi NTBG1000N170M1-D.PDF Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 20V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 640µA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 1000 V
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
10+4.68 EUR
100+3.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NTBG1000N170M1 NTBG1000N170M1 Hersteller : onsemi NTBG1000N170M1_D-3150438.pdf SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
auf Bestellung 666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.06 EUR
10+5.3 EUR
25+5.23 EUR
100+3.82 EUR
800+3.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTBG1000N170M1 Hersteller : ONSEMI NTBG1000N170M1-D.PDF NTBG1000N170M1 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH