NTBGS001N06C onsemi

Description: POWER MOSFET, 60 V, 1.1 M?, 342, Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 562µA, Power Dissipation (Max): 3.7W (Ta), 245W (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR).