NTBGS001N06C ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NTBGS001N06C - Leistungs-MOSFET, n-Kanal, 60 V, 342 A, 0.00089 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 342A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 245W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 245W
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 890µohm
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 890µohm
SVHC: Lead (14-Jun-2023)
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Technische Details NTBGS001N06C ONSEMI
Description: ONSEMI - NTBGS001N06C - Leistungs-MOSFET, n-Kanal, 60 V, 342 A, 0.00089 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 342A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 245W, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 245W, Bauform - Transistor: TO-263 (D2PAK), Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 7Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 890µohm, Rds(on)-Prüfspannung: 12V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 890µohm, SVHC: Lead (14-Jun-2023).
Weitere Produktangebote NTBGS001N06C nach Preis ab 15.18 EUR bis 27.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NTBGS001N06C | onsemi |
Description: POWER MOSFET, 60 V, 1.1 M?, 342 Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 562µA Power Dissipation (Max): 3.7W (Ta), 245W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
auf Bestellung 546 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBGS001N06C | onsemi |
MOSFETs Power MOSFET, 60 V, 1.1 mohm, 342 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 1.0 m?, 363 A, Single N-Channel, D2PAK7 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBGS001N06C |
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Hersteller: onsemi
Description: POWER MOSFET, 60 V, 1.1 M?, 342
Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 562µA
Power Dissipation (Max): 3.7W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: POWER MOSFET, 60 V, 1.1 M?, 342
Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 562µA
Power Dissipation (Max): 3.7W (Ta), 245W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.38 EUR |
| 10+ | 18.54 EUR |
| 100+ | 15.18 EUR |
| NTBGS001N06C |
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Hersteller: onsemi
MOSFETs Power MOSFET, 60 V, 1.1 mohm, 342 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 1.0 m?, 363 A, Single N-Channel, D2PAK7
MOSFETs Power MOSFET, 60 V, 1.1 mohm, 342 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 1.0 m?, 363 A, Single N-Channel, D2PAK7
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.04 EUR |
| 10+ | 19.75 EUR |
| 25+ | 19.73 EUR |
| 100+ | 18.96 EUR |
| 250+ | 18.93 EUR |
| 500+ | 17.85 EUR |
| 800+ | 16.81 EUR |