NTBGS1D5N06C onsemi
Hersteller: onsemiDescription: POWER MOSFET, 60 V, 1.62 M?, 267
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V
Power Dissipation (Max): 3.7W (Ta), 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 318µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V
auf Bestellung 9100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.7 EUR |
| 1600+ | 4.88 EUR |
| 2400+ | 4.6 EUR |
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Technische Details NTBGS1D5N06C onsemi
Description: POWER MOSFET, 60 V, 1.62 M?, 267, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V, Power Dissipation (Max): 3.7W (Ta), 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 318µA, Supplier Device Package: D2PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V.
Weitere Produktangebote NTBGS1D5N06C nach Preis ab 4.7 EUR bis 9.64 EUR
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NTBGS1D5N06C | Hersteller : onsemi |
Description: POWER MOSFET, 60 V, 1.62 M?, 267 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V Power Dissipation (Max): 3.7W (Ta), 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 318µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V |
auf Bestellung 9100 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBGS1D5N06C | Hersteller : onsemi |
MOSFET Power MOSFET, 60 V, 1.62 m?, 267 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 1.5 m?, 294 A, Single N-Channel, D2PAK7 |
auf Bestellung 3680 Stücke: Lieferzeit 10-14 Tag (e) |
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