NTBL023N065M3S onsemi
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32.6mOhm @ 20A, 18V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
auf Bestellung 1760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.48 EUR |
| 10+ | 16.58 EUR |
| 100+ | 12.69 EUR |
| 500+ | 12.4 EUR |
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Technische Details NTBL023N065M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI, Packaging: Bulk, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 32.6mOhm @ 20A, 18V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V.
Weitere Produktangebote NTBL023N065M3S nach Preis ab 14.43 EUR bis 23.92 EUR
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NTBL023N065M3S | Hersteller : onsemi |
SiC MOSFETs SIC MOS TOLL 23MOHM 650V M3S |
auf Bestellung 1721 Stücke: Lieferzeit 10-14 Tag (e) |
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