auf Bestellung 1592 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.51 EUR |
| 10+ | 9.12 EUR |
| 100+ | 7.6 EUR |
| 500+ | 6.81 EUR |
| 2000+ | 5.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTBL032N065M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI, Packaging: Bulk, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 7.5mA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V.
Weitere Produktangebote NTBL032N065M3S nach Preis ab 5.47 EUR bis 12.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTBL032N065M3S | Hersteller : onsemi |
 Description: SILICON CARBIDE (SIC) MOSFET ELIPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 7.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V |
auf Bestellung 1931 Stücke: Lieferzeit 10-14 Tag (e) |
|