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NTBL075N065SC1

NTBL075N065SC1 onsemi

ntbl075n065sc1-d.pdf Hersteller: onsemi
SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.75 EUR
10+8.71 EUR
25+8.25 EUR
100+7.94 EUR
250+7.69 EUR
500+7.48 EUR
2000+6.34 EUR
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Technische Details NTBL075N065SC1 onsemi

Description: M2 650V SIC MOSFET 75MOHM WITH T, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tj), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 139W (Tj), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V.

Weitere Produktangebote NTBL075N065SC1 nach Preis ab 6.8 EUR bis 12.09 EUR

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NTBL075N065SC1 NTBL075N065SC1 Hersteller : onsemi ntbl075n065sc1-d.pdf Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
auf Bestellung 1912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.09 EUR
10+8.73 EUR
100+7.3 EUR
500+6.8 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTBL075N065SC1 NTBL075N065SC1 Hersteller : onsemi ntbl075n065sc1-d.pdf Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
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Im Einkaufswagen  Stück im Wert von  UAH