NTBL075N065SC1 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 24+ | 7.21 EUR |
| 25+ | 6.84 EUR |
| 100+ | 6.47 EUR |
| 250+ | 6.12 EUR |
| 500+ | 5.76 EUR |
| 1000+ | 5.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTBL075N065SC1 ON Semiconductor
Description: ONSEMI - NTBL075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 37 A, 650 V, 0.085 ohm, H-PSOF, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 37A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4.3V, MOSFET-Modul-Konfiguration: Eins, Verlustleistung: 139W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: H-PSOF, Anzahl der Pins: 8Pin(s), Produktpalette: EliteSiC Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.085ohm.
Weitere Produktangebote NTBL075N065SC1 nach Preis ab 6.15 EUR bis 16.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NTBL075N065SC1 | ON Semiconductor |
 Trans MOSFET N-CH SiC 650V 37A 9-Pin(8+Tab) HPSOF EP T/R |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBL075N065SC1 | ONSEMI |
Description: ONSEMI - NTBL075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 37 A, 650 V, 0.085 ohm, H-PSOF tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 37A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Source-Schwellenspannung, max.: 4.3V Verlustleistung: 139W SVHC: No SVHC (25-Jun-2025) Anzahl der Pins: 8Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 18V Drain-Source-Durchgangswiderstand: 0.085ohm |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBL075N065SC1 | ONSEMI |
Description: ONSEMI - NTBL075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 37 A, 650 V, 0.085 ohm, H-PSOF tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 37A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 4.3V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 139W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: H-PSOF Anzahl der Pins: 8Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 18V Drain-Source-Durchgangswiderstand: 0.085ohm |
auf Bestellung 1980 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBL075N065SC1 | onsemi | SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL |
auf Bestellung 1969 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL075N065SC1 | onsemi |
Description: M2 650V SIC MOSFET 75MOHM WITH T Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tj) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 139W (Tj) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V |
auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL075N065SC1 | onsemi |
Description: M2 650V SIC MOSFET 75MOHM WITH T Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tj) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 139W (Tj) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V |
auf Bestellung 29877 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBL075N065SC1 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 650V 37A 9-Pin(8+Tab) HPSOF EP T/R
Trans MOSFET N-CH SiC 650V 37A 9-Pin(8+Tab) HPSOF EP T/R
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 7.38 EUR |
| 25+ | 7.1 EUR |
| 100+ | 6.83 EUR |
| 250+ | 6.62 EUR |
| 500+ | 6.41 EUR |
| 1000+ | 6.15 EUR |
| NTBL075N065SC1 |
|
Hersteller: ONSEMI
Description: ONSEMI - NTBL075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 37 A, 650 V, 0.085 ohm, H-PSOF
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 37A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 4.3V
Verlustleistung: 139W
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 8Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.085ohm
Description: ONSEMI - NTBL075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 37 A, 650 V, 0.085 ohm, H-PSOF
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 37A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Source-Schwellenspannung, max.: 4.3V
Verlustleistung: 139W
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 8Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 15.4 EUR |
| 19+ | 12.28 EUR |
| 23+ | 9.47 EUR |
| 50+ | 8.22 EUR |
| 100+ | 6.99 EUR |
| 250+ | 6.83 EUR |
| NTBL075N065SC1 |
|
Hersteller: ONSEMI
Description: ONSEMI - NTBL075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 37 A, 650 V, 0.085 ohm, H-PSOF
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 37A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.3V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 139W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: H-PSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.085ohm
Description: ONSEMI - NTBL075N065SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 37 A, 650 V, 0.085 ohm, H-PSOF
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 37A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4.3V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 139W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: H-PSOF
Anzahl der Pins: 8Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 1980 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 15.4 EUR |
| 19+ | 12.28 EUR |
| 23+ | 9.47 EUR |
| 50+ | 8.22 EUR |
| 100+ | 6.99 EUR |
| 250+ | 6.83 EUR |
| NTBL075N065SC1 |
Hersteller: onsemi
SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL
SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.98 EUR |
| 10+ | 10.86 EUR |
| 100+ | 8.02 EUR |
| 500+ | 7.91 EUR |
| 1000+ | 7.5 EUR |
| NTBL075N065SC1 |
Hersteller: onsemi
Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 6.59 EUR |
| NTBL075N065SC1 |
Hersteller: onsemi
Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
Description: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
auf Bestellung 29877 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.28 EUR |
| 10+ | 11.09 EUR |
| 100+ | 8.15 EUR |
| 500+ | 8.07 EUR |