NTBL075N065SC1 onsemi
Hersteller: onsemiDescription: M2 650V SIC MOSFET 75MOHM WITH T
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 139W (Tj)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 5.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTBL075N065SC1 onsemi
Description: M2 650V SIC MOSFET 75MOHM WITH T, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tj), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 139W (Tj), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V.
Weitere Produktangebote NTBL075N065SC1 nach Preis ab 5.65 EUR bis 12.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTBL075N065SC1 | Hersteller : onsemi |
SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
NTBL075N065SC1 | Hersteller : onsemi |
Description: M2 650V SIC MOSFET 75MOHM WITH T Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tj) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 139W (Tj) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1191 pF @ 325 V |
auf Bestellung 29887 Stücke: Lieferzeit 10-14 Tag (e) |
|