auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.36 EUR |
| 10+ | 6.65 EUR |
| 100+ | 5.54 EUR |
| 500+ | 5.33 EUR |
| 1000+ | 5.28 EUR |
| 2000+ | 5.26 EUR |
| 4000+ | 5.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTBLS001N06C onsemi
Description: MOSFET N-CH 60V 51A/422A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V, Power Dissipation (Max): 4.2W (Ta), 284W (Tc), Vgs(th) (Max) @ Id: 4V @ 562µA, Supplier Device Package: 8-HPSOF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V.
Weitere Produktangebote NTBLS001N06C nach Preis ab 5.02 EUR bis 11.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTBLS001N06C | Hersteller : onsemi |
Description: MOSFET N-CH 60V 51A/422A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 284W (Tc) Vgs(th) (Max) @ Id: 4V @ 562µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V |
auf Bestellung 1689 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| NTBLS001N06C | Hersteller : ON Semiconductor |
|
auf Bestellung 1980 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
| NTBLS001N06C | Hersteller : ON Semiconductor |
Power MOSFET 60 V, 1 mW, 297 A, Single N-Channel, TOLL |
Produkt ist nicht verfügbar |
||||||||||||||||
|
NTBLS001N06C | Hersteller : onsemi |
Description: MOSFET N-CH 60V 51A/422A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 422A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 4.2W (Ta), 284W (Tc) Vgs(th) (Max) @ Id: 4V @ 562µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11575 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||||||||||||
| NTBLS001N06C | Hersteller : ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L Mounting: SMD Case: H-PSOF8L Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate charge: 143nC On-state resistance: 0.9mΩ Power dissipation: 284W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 422A Pulsed drain current: 900A Polarisation: unipolar |
Produkt ist nicht verfügbar |

