| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.96 EUR |
| 10+ | 10.16 EUR |
| 100+ | 7.44 EUR |
| 500+ | 7.27 EUR |
| 1000+ | 6.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTBLS1D7N10MCTXG onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V, Power Dissipation (Max): 3.4W (Ta), 295W (Tc), Vgs(th) (Max) @ Id: 4V @ 698µA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V.
Weitere Produktangebote NTBLS1D7N10MCTXG nach Preis ab 7.76 EUR bis 15.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTBLS1D7N10MCTXG | onsemi |
 Description: MOSFET, POWER, SINGLE N-CHANNEL,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
auf Bestellung 1776 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTBLS1D7N10MCTXG |
|
Hersteller: onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Description: MOSFET, POWER, SINGLE N-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 295W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
auf Bestellung 1776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.82 EUR |
| 10+ | 10.75 EUR |
| 100+ | 7.89 EUR |
| 500+ | 7.76 EUR |