NTBLS1D7N10MCTXG onsemi
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.97 EUR |
| 10+ | 8.52 EUR |
| 25+ | 8.47 EUR |
| 100+ | 6.23 EUR |
| 500+ | 5.72 EUR |
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Technische Details NTBLS1D7N10MCTXG onsemi
Description: MOSFET, POWER, SINGLE N-CHANNEL,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V, Power Dissipation (Max): 3.4W (Ta), 295W (Tc), Vgs(th) (Max) @ Id: 4V @ 698µA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V.
Weitere Produktangebote NTBLS1D7N10MCTXG nach Preis ab 5.56 EUR bis 12.69 EUR
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NTBLS1D7N10MCTXG | Hersteller : onsemi |
 Description: MOSFET, POWER, SINGLE N-CHANNEL,Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
auf Bestellung 1930 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTBLS1D7N10MCTXG | Hersteller : ONSEMI |
NTBLS1D7N10MCTXG SMD N channel transistors |
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NTBLS1D7N10MCTXG | Hersteller : onsemi |
Description: MOSFET, POWER, SINGLE N-CHANNEL, Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 272A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 295W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V |
Produkt ist nicht verfügbar |