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NTBV45N06T4G

NTBV45N06T4G onsemi


Hersteller: onsemi
Description: MOSFET N-CH 60V 45A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
auf Bestellung 61003 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
329+1.47 EUR
Mindestbestellmenge: 329
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTBV45N06T4G onsemi

Description: MOSFET N-CH 60V 45A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V.

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NTBV45N06T4G Hersteller : ONSEMI ONSM-S-A0013300555-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTBV45N06T4G - NTBV45N06T4G, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 61003 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTBV45N06T4G NTBV45N06T4G Hersteller : onsemi Description: MOSFET N-CH 60V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH