
NTC040N120SC1 onsemi

Description: SIC MOS WAFER SALES 40MOHM 1200V
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
auf Bestellung 20754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
819+ | 18.61 EUR |
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Technische Details NTC040N120SC1 onsemi
Description: SIC MOS WAFER SALES 40MOHM 1200V, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V.
Weitere Produktangebote NTC040N120SC1 nach Preis ab 21 EUR bis 34.25 EUR
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NTC040N120SC1 | Hersteller : onsemi |
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auf Bestellung 1 Stücke: Lieferzeit 143-147 Tag (e) |
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NTC040N120SC1 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NTC040N120SC1 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |