auf Bestellung 51 Stücke:
Lieferzeit 147-161 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 49.53 EUR |
| 10+ | 43.65 EUR |
| 25+ | 42.46 EUR |
| 50+ | 40.09 EUR |
| 100+ | 37.73 EUR |
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Technische Details NTC040N120SC1 onsemi
Description: SIC MOS WAFER SALES 40MOHM 1200V, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V.
Weitere Produktangebote NTC040N120SC1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTC040N120SC1 | Hersteller : ON Semiconductor |
 Silicon Carbide MOSFET, N Channel, 1200 V, 40 m, Bare Die |
Produkt ist nicht verfügbar |
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| NTC040N120SC1 | Hersteller : ON Semiconductor |
Silicon Carbide MOSFET,40mohm,1200V |
Produkt ist nicht verfügbar |
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NTC040N120SC1 | Hersteller : onsemi |
Description: SIC MOS WAFER SALES 40MOHM 1200V Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V |
Produkt ist nicht verfügbar |