NTC080N120SC1 onsemi

Description: SIC MOS WAFER SALES 80MOHM 1200V, Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -15V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Obsolete, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 4.3V @ 5mA, Power Dissipation (Max): 178W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.