NTD20N03L27-001 onsemi

Description: MOSFET N-CH 30V 20A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.75W (Ta), 74W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.