NTD20N03L27-001 ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - NTD20N03L27-001 - MOSFET N-CH 30V 20A IPAK
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9726 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details NTD20N03L27-001 ONSEMI
Description: MOSFET N-CH 30V 20A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V, Power Dissipation (Max): 1.75W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V.
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NTD20N03L27-001 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 20A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V Power Dissipation (Max): 1.75W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V |
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