Technische Details NTD20N06T4 ON
Description: MOSFET N-CH 60V 20A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V, Power Dissipation (Max): 1.88W (Ta), 60W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V.
Weitere Produktangebote NTD20N06T4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NTD20N06T4 | Hersteller : ON |
 TO-252/D-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD20N06T4 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 20A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTD20N06T4 | Hersteller : onsemi |
MOSFET 60V 20A N-Channel |
Produkt ist nicht verfügbar |