NTD20P06LT4G onsemi
Hersteller: onsemiDescription: MOSFET P-CH 60V 15.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.07 EUR |
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Technische Details NTD20P06LT4G onsemi
Description: MOSFET P-CH 60V 15.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V.
Weitere Produktangebote NTD20P06LT4G nach Preis ab 1.02 EUR bis 2.6 EUR
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NTD20P06LT4G | Hersteller : onsemi |
MOSFET -60V -15.5A P-Channel |
auf Bestellung 59764 Stücke: Lieferzeit 14-28 Tag (e) |
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NTD20P06LT4G | Hersteller : onsemi |
Description: MOSFET P-CH 60V 15.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V |
auf Bestellung 2695 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD20P06LT4G | Hersteller : ONSEMI |
Description: ONSEMI - NTD20P06LT4G - Leistungs-MOSFET, p-Kanal, 60 V, 15.5 A, 0.143 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 65W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.143ohm |
auf Bestellung 1330 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20P06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 15.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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NTD20P06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 15.5A 3-Pin(2+Tab) DPAK T/R |
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NTD20P06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 15.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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NTD20P06LT4G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Drain-source voltage: -60V Drain current: -15.5A On-state resistance: 0.13Ω Anzahl je Verpackung: 1 Stücke |
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NTD20P06LT4G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Drain-source voltage: -60V Drain current: -15.5A On-state resistance: 0.13Ω |
Produkt ist nicht verfügbar |