NTD24N06LT4G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.55 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.79 EUR |
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Technische Details NTD24N06LT4G onsemi
Description: MOSFET N-CH 60V 24A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V, Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V.
Weitere Produktangebote NTD24N06LT4G nach Preis ab 1.29 EUR bis 3.74 EUR
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NTD24N06LT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 24A 3-Pin(2+Tab) DPAK T/R |
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NTD24N06LT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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NTD24N06LT4G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 24A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTD24N06LT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |