NTD280N60S5Z onsemi
Hersteller: onsemiDescription: SF5 600V EASY ZENER 280MOHM WITH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 400 V
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.5A, 10V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.53 EUR |
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Technische Details NTD280N60S5Z onsemi
Description: SF5 600V EASY ZENER 280MOHM WITH, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 400 V, Rds On (Max) @ Id, Vgs: 280mOhm @ 5.5A, 10V.
Weitere Produktangebote NTD280N60S5Z nach Preis ab 1.69 EUR bis 3.89 EUR
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NTD280N60S5Z | Hersteller : onsemi |
Description: SF5 600V EASY ZENER 280MOHM WITH Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 400 V Rds On (Max) @ Id, Vgs: 280mOhm @ 5.5A, 10V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD280N60S5Z | Hersteller : onsemi |
MOSFETs SF5 600V EASY ZENER 280MOHM WITH DPAK |
auf Bestellung 2395 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTD280N60S5Z | Hersteller : ON Semiconductor |
Power, SingleN-Channel, SUPERFET,with Zener Diode, DPAK600 V, 280 mOhm, 13 A |
Produkt ist nicht verfügbar |
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| NTD280N60S5Z | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NTD280N60S5Z | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |