Technische Details NTD2955T4G ON Semiconductor
Description: ONSEMI - NTD2955T4G - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.18 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 12A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 2.8V, Verlustleistung: 55W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.18ohm.
Weitere Produktangebote NTD2955T4G nach Preis ab 0.56 EUR bis 3.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NTD2955T4G | ON Semiconductor |
 Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD2955T4G | ON Semiconductor |
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 42500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD2955T4G | ON Semiconductor |
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 42500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD2955T4G | onsemi |
Description: MOSFET P-CH 60V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 55W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD2955T4G | ON Semiconductor |
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD2955T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Mounting: SMD Pulsed drain current: -18A Power dissipation: 55W Gate charge: 15nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 0.18Ω |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD2955T4G | onsemi |
MOSFETs -60V -12A P-Channel |
auf Bestellung 21816 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD2955T4G | onsemi |
Description: MOSFET P-CH 60V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Power Dissipation (Max): 55W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V |
auf Bestellung 35416 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD2955T4G | ON Semiconductor |
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTD2955T4G | ONSEMI |
Description: ONSEMI - NTD2955T4G - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.18 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 2.8V Verlustleistung: 55W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.18ohm |
auf Bestellung 5765 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTD2955T4G | ON Semiconductor |
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 13 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTD2955T4G |
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Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.56 EUR |
| NTD2955T4G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 42500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.65 EUR |
| NTD2955T4G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 42500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.65 EUR |
| NTD2955T4G |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 55W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 55W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.9 EUR |
| 5000+ | 0.83 EUR |
| NTD2955T4G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 178+ | 0.99 EUR |
| 250+ | 0.93 EUR |
| 2500+ | 0.81 EUR |
| NTD2955T4G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Mounting: SMD
Pulsed drain current: -18A
Power dissipation: 55W
Gate charge: 15nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.18Ω
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.3 EUR |
| 72+ | 1.19 EUR |
| 100+ | 0.94 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.76 EUR |
| NTD2955T4G |
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Hersteller: onsemi
MOSFETs -60V -12A P-Channel
MOSFETs -60V -12A P-Channel
auf Bestellung 21816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.19 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.99 EUR |
| 2500+ | 0.92 EUR |
| NTD2955T4G |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 55W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Power Dissipation (Max): 55W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 35416 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.47 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.07 EUR |
| NTD2955T4G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
| NTD2955T4G |
|
Hersteller: ONSEMI
Description: ONSEMI - NTD2955T4G - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.18 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 2.8V
Verlustleistung: 55W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.18ohm
Description: ONSEMI - NTD2955T4G - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.18 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 2.8V
Verlustleistung: 55W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.18ohm
auf Bestellung 5765 Stücke:
Lieferzeit 14-21 Tag (e)
| NTD2955T4G |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)