Technische Details NTD3055-094-1G ON
Description: MOSFET N-CH 60V 12A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 94mOhm @ 6A, 10V, Power Dissipation (Max): 1.5W (Ta), 48W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote NTD3055-094-1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTD30550941G | Hersteller : ON |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD3055-094-1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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NTD3055-094-1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 12A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 6A, 10V Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
Produkt ist nicht verfügbar |