NTD4302T4G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 8.4A/68A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
auf Bestellung 1134 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 426+ | 1.85 EUR |
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Technische Details NTD4302T4G onsemi
Description: MOSFET N-CH 30V 8.4A/68A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 1.04W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V.
Weitere Produktangebote NTD4302T4G nach Preis ab 3.12 EUR bis 4.45 EUR
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NTD4302T4G | Hersteller : onsemi |
MOSFET 30V 68A N-Channel |
auf Bestellung 406 Stücke: Lieferzeit 14-28 Tag (e) |
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NTD4302T4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 11.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4302T4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 11.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD4302T4G********** |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD4302T4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 11.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| NTD4302T4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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NTD4302T4G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 8.4A/68A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V |
Produkt ist nicht verfügbar |
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NTD4302T4G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 8.4A/68A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V |
Produkt ist nicht verfügbar |
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| NTD4302T4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |