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NTD4809N-35G

NTD4809N-35G onsemi

NTD4809N%2CNVD4809N.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
auf Bestellung 61875 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1401+0.5 EUR
Mindestbestellmenge: 1401
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Technische Details NTD4809N-35G onsemi

Description: MOSFET N-CH 30V 9.6A/58A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, Power Dissipation (Max): 1.4W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V.

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NTD4809N-35G NTD4809N-35G Hersteller : ONSEMI ONSM-S-A0013669738-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTD4809N-35G - NTD4809N-35G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 61875 Stücke:
Lieferzeit 14-21 Tag (e)
NTD4809N-35G Hersteller : ON NTD4809N%2CNVD4809N.pdf 09+ TO252
auf Bestellung 69000 Stücke:
Lieferzeit 21-28 Tag (e)
NTD4809N-35G NTD4809N-35G Hersteller : ON Semiconductor ntd4809n-d.pdf Trans MOSFET N-CH 30V 13.1A 3-Pin(3+Tab) IPAK Tube
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NTD4809N-35G NTD4809N-35G Hersteller : onsemi NTD4809N%2CNVD4809N.pdf Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
Produkt ist nicht verfügbar
NTD4809N-35G NTD4809N-35G Hersteller : onsemi NTD4809N_D-2318669.pdf MOSFET NFET 30V 58A 9MOHM
Produkt ist nicht verfügbar