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NTD4809NT4G

NTD4809NT4G onsemi

ONSMS38712-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
auf Bestellung 60285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
789+0.61 EUR
Mindestbestellmenge: 789
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Technische Details NTD4809NT4G onsemi

Description: POWER FIELD-EFFECT TRANSISTOR, 9, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V, Power Dissipation (Max): 1.4W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V.

Weitere Produktangebote NTD4809NT4G nach Preis ab 0.88 EUR bis 1.52 EUR

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Preis ohne MwSt
NTD4809NT4G NTD4809NT4G Hersteller : onsemi NTD4809N_D-2318669.pdf MOSFET NFET 30V 58A 9MOHM
auf Bestellung 2773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.52 EUR
10+ 1.36 EUR
100+ 1.06 EUR
500+ 0.88 EUR
Mindestbestellmenge: 2
NTD4809NT4G Hersteller : ON ONSMS38712-1.pdf?t.download=true&u=5oefqw NTD4809N%2CNVD4809N.pdf SOT-252 10+
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
NTD4809NT4G Hersteller : ONSEMI ONSM-S-A0013669738-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTD4809NT4G - MOSFET, N CHANNEL, 30V, 13.1A, TO-252-3
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 60285 Stücke:
Lieferzeit 14-21 Tag (e)
NTD4809NT4G NTD4809NT4G Hersteller : ON Semiconductor ntd4809n-d.pdf Trans MOSFET N-CH 30V 13.1A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
NTD4809NT4G NTD4809NT4G Hersteller : onsemi NTD4809N%2CNVD4809N.pdf Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
Produkt ist nicht verfügbar