Produkte > ONSEMI > NTD4857N-1G
NTD4857N-1G

NTD4857N-1G onsemi

ntd4857n.pdf Hersteller: onsemi
Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
auf Bestellung 8400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1268+0.41 EUR
Mindestbestellmenge: 1268
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTD4857N-1G onsemi

Description: MOSFET N-CH 25V 12A/78A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V, Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V.

Weitere Produktangebote NTD4857N-1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTD4857N-1G Hersteller : ONSEMI ONSM-S-A0013295962-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTD4857N-1G - NTD4857N-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8400 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTD4857N-1G NTD4857N-1G Hersteller : onsemi ntd4857n.pdf Description: MOSFET N-CH 25V 12A/78A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 1.31W (Ta), 56.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH