NTD4857NAT4G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 25V 12A/78A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details NTD4857NAT4G onsemi
Description: MOSFET N-CH 25V 12A/78A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 78A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.
Weitere Produktangebote NTD4857NAT4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NTD4857NAT4G | ON Semiconductor |
auf Bestellung 795 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTD4857NAT4G |
Hersteller: ON Semiconductor
auf Bestellung 795 Stücke:
Lieferzeit 21-28 Tag (e)