NTD4860NT4G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 25V 10.4A/65A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
auf Bestellung 42111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 615+ | 0.76 EUR |
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Technische Details NTD4860NT4G onsemi
Description: MOSFET N-CH 25V 10.4A/65A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V, Power Dissipation (Max): 1.28W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V.
Weitere Produktangebote NTD4860NT4G nach Preis ab 0.37 EUR bis 1.34 EUR
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NTD4860NT4G | Hersteller : ON Semiconductor |
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auf Bestellung 22000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4860NT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 16451 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4860NT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3660 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4860NT4G | Hersteller : UMW |
Description: MOSFET N-CH 25V 10.4A/65A DPAK Packaging: Cut Tape (CT) |
auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD4860NT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4860NT4G | Hersteller : onsemi |
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auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTD4860NT4G | Hersteller : ON Semiconductor |
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auf Bestellung 309 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD4860NT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| NTD4860NT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 50A; Idm: 130A; 50W; DPAK Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 130A Mounting: SMD Case: DPAK Drain-source voltage: 25V Drain current: 50A On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTD4860NT4G | Hersteller : onsemi |
Description: MOSFET N-CH 25V 10.4A/65A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 1.28W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTD4860NT4G | Hersteller : UMW |
Description: MOSFET N-CH 25V 10.4A/65A DPAK Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| NTD4860NT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 50A; Idm: 130A; 50W; DPAK Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 130A Mounting: SMD Case: DPAK Drain-source voltage: 25V Drain current: 50A On-state resistance: 8.9mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |