NTD4863NA-1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 25V 9.2A/49A IPAK
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
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Technische Details NTD4863NA-1G onsemi
Description: MOSFET N-CH 25V 9.2A/49A IPAK, Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc).