NTD4906N-35G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Description: MOSFET N-CH 30V 10.3A/54A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
auf Bestellung 676661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1401+ | 0.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTD4906N-35G onsemi
Description: ONSEMI - NTD4906N-35G - Leistungs-MOSFET, n-Kanal, 30 V, 54 A, 0.0046 ohm, TO-251 (IPAK), Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 54A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.2V, euEccn: NLR, Verlustleistung: 37.5W, Bauform - Transistor: TO-251 (IPAK), Anzahl der Pins: 3Pin(s), Produktpalette: PW Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0046ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote NTD4906N-35G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
NTD4906N-35G | Hersteller : ONSEMI |
Description: ONSEMI - NTD4906N-35G - Leistungs-MOSFET, n-Kanal, 30 V, 54 A, 0.0046 ohm, TO-251 (IPAK), Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 37.5W Bauform - Transistor: TO-251 (IPAK) Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0046ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 676661 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4906N-35G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 30V 14A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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NTD4906N-35G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 10.3A/54A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V |
Produkt ist nicht verfügbar |