Technische Details NTD4906NAT4G ON Semiconductor
Description: MOSFET N-CH 30V 10.3A/54A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: DPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V.
Weitere Produktangebote NTD4906NAT4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NTD4906NAT4G | Hersteller : ON Semiconductor |
 TRANS MOSFET N-CH 30V 14A 3-PIN(3+TAB) IPAK RAIL |
Produkt ist nicht verfügbar |
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NTD4906NAT4G | Hersteller : onsemi |
Description: MOSFET N-CH 30V 10.3A/54A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V |
Produkt ist nicht verfügbar |