Technische Details NTD4906NAT4G ON Semiconductor
Description: MOSFET N-CH 30V 10.3A/54A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTD4906NAT4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTD4906NAT4G | onsemi |
Description: MOSFET N-CH 30V 10.3A/54A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD4906NAT4G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.3A/54A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 10.3A/54A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH