Technische Details NTD80N02 ON
Description: MOSFET N-CH 24V 80A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V.
Weitere Produktangebote NTD80N02
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTD80N02 | Hersteller : ON |
 SOT-252 |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTD80N02 | Hersteller : ON |
TO-252/D-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTD80N02 | Hersteller : onsemi |
Description: MOSFET N-CH 24V 80A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V |
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