NTDV20P06LT4G-VF01 ON Semiconductor
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Technische Details NTDV20P06LT4G-VF01 ON Semiconductor
Description: PFET DPAK 60V 15.5A 130R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V.
Weitere Produktangebote NTDV20P06LT4G-VF01
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTDV20P06LT4G-VF01 | Hersteller : ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: DPAK Drain-source voltage: 60V Drain current: 15.5A On-state resistance: 143mΩ Anzahl je Verpackung: 1 Stücke |
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NTDV20P06LT4G-VF01 | Hersteller : onsemi |
Description: PFET DPAK 60V 15.5A 130R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTDV20P06LT4G-VF01 | Hersteller : onsemi |
Description: PFET DPAK 60V 15.5A 130R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTDV20P06LT4G-VF01 | Hersteller : ON Semiconductor |
MOSFET PFET DPAK 60V 15.5A 130R |
Produkt ist nicht verfügbar |
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| NTDV20P06LT4G-VF01 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: DPAK Drain-source voltage: 60V Drain current: 15.5A On-state resistance: 143mΩ |
Produkt ist nicht verfügbar |