NTDV20P06LT4G-VF01 onsemi
Hersteller: onsemi
Description: PFET DPAK 60V 15.5A 130R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V
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Technische Details NTDV20P06LT4G-VF01 onsemi
Description: PFET DPAK 60V 15.5A 130R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 25 V.
Weitere Produktangebote NTDV20P06LT4G-VF01
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NTDV20P06LT4G-VF01 | onsemi |
MOSFETs PFET DPAK 60V 15.5A 130R |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NTDV20P06LT4G-VF01 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Mounting: SMD Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 143mΩ Pulsed drain current: 50A Power dissipation: 65W Gate charge: 15nC Polarisation: unipolar Drain current: 15.5A Kind of channel: enhancement Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTDV20P06LT4G-VF01 |
|
Hersteller: onsemi
MOSFETs PFET DPAK 60V 15.5A 130R
MOSFETs PFET DPAK 60V 15.5A 130R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTDV20P06LT4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 143mΩ
Pulsed drain current: 50A
Power dissipation: 65W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 15.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 143mΩ
Pulsed drain current: 50A
Power dissipation: 65W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 15.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH