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NTDV5805NT4G

NTDV5805NT4G onsemi

NTD5805N,NVD5805N.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 51A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
auf Bestellung 14538 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
833+0.85 EUR
Mindestbestellmenge: 833
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Technische Details NTDV5805NT4G onsemi

Description: MOSFET N-CH 40V 51A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V.

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NTDV5805NT4G NTDV5805NT4G Hersteller : ON Semiconductor NTD5805N-D-844723.pdf MOSFET NFET 40V 51A 9.5MOHM
auf Bestellung 2038 Stücke:
Lieferzeit 14-28 Tag (e)
NTDV5805NT4G NTDV5805NT4G Hersteller : ONSEMI NTD5805N-D.PDF Description: ONSEMI - NTDV5805NT4G - NTDV5805NT4G - MOSFET N-CH 40V 51A DPAK
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 14538 Stücke:
Lieferzeit 14-21 Tag (e)
NTDV5805NT4G NTDV5805NT4G Hersteller : onsemi NTD5805N,NVD5805N.pdf Description: MOSFET N-CH 40V 51A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
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