Technische Details NTE112 NTE Electronics, Inc
Category: THT Schottky diodes, Description: Diode: Schottky switching; THT; 5V; 30mA; DO35; Ufmax: 550mV, Type of diode: Schottky switching, Mounting: THT, Max. off-state voltage: 5V, Load current: 30mA, Semiconductor structure: single diode, Features of semiconductor devices: RF; small signal, Capacitance: 1pF, Max. forward voltage: 0.55V, Case: DO35, Max. forward impulse current: 60mA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE112
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NTE112 | Hersteller : NTE Electronics |
 Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 5V; 30mA; DO35; Ufmax: 550mV Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 5V Load current: 30mA Semiconductor structure: single diode Features of semiconductor devices: RF; small signal Capacitance: 1pF Max. forward voltage: 0.55V Case: DO35 Max. forward impulse current: 60mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE112 | Hersteller : NTE Electronics |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 5V; 30mA; DO35; Ufmax: 550mV Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 5V Load current: 30mA Semiconductor structure: single diode Features of semiconductor devices: RF; small signal Capacitance: 1pF Max. forward voltage: 0.55V Case: DO35 Max. forward impulse current: 60mA |
Produkt ist nicht verfügbar |