NTE221 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: MOSFET N-CH VHF AMP/MIX
Packaging: Bag
Package / Case: TO-206AF, TO-72-4 Metal Can
Current Rating (Amps): 18mA
Mounting Type: Through Hole
Configuration: N-Channel
Gain: 20dB
Technology: MOSFET
Noise Figure: 5dB
Supplier Device Package: TO-72
Part Status: Active
Voltage - Rated: 20 V
Voltage - Test: 13 V
Current - Test: 10 mA
Description: MOSFET N-CH VHF AMP/MIX
Packaging: Bag
Package / Case: TO-206AF, TO-72-4 Metal Can
Current Rating (Amps): 18mA
Mounting Type: Through Hole
Configuration: N-Channel
Gain: 20dB
Technology: MOSFET
Noise Figure: 5dB
Supplier Device Package: TO-72
Part Status: Active
Voltage - Rated: 20 V
Voltage - Test: 13 V
Current - Test: 10 mA
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 21.45 EUR |
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Technische Details NTE221 NTE Electronics, Inc
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 20V; 18mA; 400mW; TO72; THT, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of transistor: RF, Drain-source voltage: 20V, Drain current: 18mA, Power dissipation: 0.4W, Case: TO72, Kind of channel: depleted, Features of semiconductor devices: dual gate; ESD protected gate, Electrical mounting: THT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE221
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE221 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 20V; 18mA; 400mW; TO72; THT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 20V Drain current: 18mA Power dissipation: 0.4W Case: TO72 Kind of channel: depleted Features of semiconductor devices: dual gate; ESD protected gate Electrical mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE221 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 20V; 18mA; 400mW; TO72; THT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 20V Drain current: 18mA Power dissipation: 0.4W Case: TO72 Kind of channel: depleted Features of semiconductor devices: dual gate; ESD protected gate Electrical mounting: THT |
Produkt ist nicht verfügbar |