NTE2376

NTE2376 NTE Electronics, Inc


nte2376.pdf Hersteller: NTE Electronics, Inc
Description: MOSFET N-CHANNEL 200V 30A TO247
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1808 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.16 EUR
10+20.1 EUR
20+19.04 EUR
50+17.99 EUR
100+17.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTE2376 NTE Electronics, Inc

Description: MOSFET N-CHANNEL 200V 30A TO247, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.

Weitere Produktangebote NTE2376 nach Preis ab 10.01 EUR bis 23.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTE2376 NTE2376 Hersteller : NTE Electronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8F8ADB1303D80C1&compId=nte2376.pdf?ci_sign=4c36f580485af8806695fb82752388a85e7a5d74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 120A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
5+14.3 EUR
25+10.01 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NTE2376 NTE2376 Hersteller : NTE Electronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8F8ADB1303D80C1&compId=nte2376.pdf?ci_sign=4c36f580485af8806695fb82752388a85e7a5d74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 120A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NTE2376 Hersteller : NTE Electronics, Inc. nte2376.pdf Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+20.96 EUR
25+15.61 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH