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NTE2376

NTE2376 NTE Electronics, Inc

nte2376.pdf
Hersteller: NTE Electronics, Inc
Description: MOSFET N-CHANNEL 200V 30A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bag
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
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Technische Details NTE2376 NTE Electronics, Inc

Description: MOSFET N-CHANNEL 200V 30A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bag, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V.