NTE2376 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET N-CHANNEL 200V 30A TO247
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1808 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.16 EUR |
| 10+ | 20.1 EUR |
| 20+ | 19.04 EUR |
| 50+ | 17.99 EUR |
| 100+ | 17.56 EUR |
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Technische Details NTE2376 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 200V 30A TO247, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V.
Weitere Produktangebote NTE2376 nach Preis ab 10.1 EUR bis 23.84 EUR
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NTE2376 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 120A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Pulsed drain current: 120A Power dissipation: 190W Case: TO247 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: THT Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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NTE2376 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 120A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Pulsed drain current: 120A Power dissipation: 190W Case: TO247 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: THT Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTE2376 | Hersteller : NTE Electronics, Inc. |
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247 |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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