NTE2381 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: MOSFET P-CHANNEL 500V 2.7A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 19.99 EUR |
| 10+ | 18.99 EUR |
| 20+ | 17.99 EUR |
| 50+ | 17 EUR |
| 100+ | 16.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE2381 NTE Electronics, Inc
Description: MOSFET P-CHANNEL 500V 2.7A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V.
Weitere Produktangebote NTE2381
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
NTE2381 | Hersteller : NTE Electronics, Inc. |
Trans MOSFET P-CH Si 500V 2.7A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
|
 |
NTE2381 | Hersteller : NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -2.7A; Idm: -10.8A; 85W Drain-source voltage: -500V Drain current: -2.7A On-state resistance: 6Ω Type of transistor: P-MOSFET Power dissipation: 85W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -10.8A Mounting: THT Case: TO220 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
NTE2381 | Hersteller : NTE Electronics |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -2.7A; Idm: -10.8A; 85W Drain-source voltage: -500V Drain current: -2.7A On-state resistance: 6Ω Type of transistor: P-MOSFET Power dissipation: 85W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -10.8A Mounting: THT Case: TO220 |
Produkt ist nicht verfügbar |