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NTE2381

NTE2381 NTE Electronics, Inc

nte2380.pdf
Hersteller: NTE Electronics, Inc
Description: MOSFET P-CHANNEL 500V 2.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bag
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Technische Details NTE2381 NTE Electronics, Inc

Description: MOSFET P-CHANNEL 500V 2.7A TO220, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bag.