NTE2391 NTE Electronics

Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -29A; Idm: -140A; 200W; TO220, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -29A, Pulsed drain current: -140A, Power dissipation: 200W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 60mΩ, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.