NTE2900 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2900 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 250V, Drain current: 8.5A, Pulsed drain current: 56A, Power dissipation: 125W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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NTE2900 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: TO220 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |