NTE2909 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 230A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE2909 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 230A; 200W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 40A, Pulsed drain current: 230A, Power dissipation: 200W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 23mΩ, Mounting: THT, Kind of channel: enhancement.